Three-dimensional devices having reduced contact length

ABSTRACT

Various embodiments comprise apparatuses and methods including a memory array having alternating levels of semiconductor materials and dielectric material with strings of memory cells formed on the alternating levels. One such apparatus includes a memory array formed substantially within a cavity of a substrate. Peripheral circuitry can be formed adjacent to a surface of the substrate and adjacent to the memory array. Additional apparatuses and methods are described.

PRIORITY APPLICATION

This application is a continuation of U.S. application Ser. No.15/154,335, filed May 13, 2016, now issued as U.S. Pat. No. 9,728,538,which is a continuation of U.S. application Ser. No. 14/615,830, filedFeb. 6, 2015, now issued as U.S. Pat. No. 9,343,479, which is adivisional of U.S. application Ser. No. 13/599,900, filed Aug. 30, 2012,now issued as U.S. Pat. No. 8,952,482, all of which are incorporatedherein by reference in their entireties.

BACKGROUND

Computers and other electronic systems, for example, digitaltelevisions, digital cameras, and cellular phones, often have one ormore memory and other devices to store information. Increasingly, memoryand other devices are being reduced in size to achieve a higher densityof storage capacity and/or a higher density of functionality.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of a memory device having a memory arraywith memory cells, according to an embodiment;

FIG. 2 shows a partial block diagram of a memory device having a memoryarray including memory cells with access components and memory elements,according to an embodiment;

FIG. 3 shows a plan view of a block diagram of a memory device,according to various embodiments;

FIG. 4A through FIG. 4D show elevational views during various operationsperformed in the formation of a memory device, according to anembodiment;

FIG. 5A through FIG. 5C show elevational views during various operationsperformed in the formation of a memory device, according to anembodiment; and

FIG. 6 is a block diagram of a system embodiment, including a memorydevice according to various embodiments described herein.

DETAILED DESCRIPTION

The description that follows includes illustrative apparatuses(circuitry, devices, structures, systems, and the like) and methods(e.g., processes, protocols, sequences, techniques, and technologies)that embody the subject matter. In the following description, forpurposes of explanation, numerous specific details are set forth inorder to provide an understanding of various embodiments of the subjectmatter. After reading this disclosure, it will be evident to person ofordinary skill in the art however, that various embodiments of thesubject matter may be practiced without these specific details. Further,well-known apparatuses and methods have not been shown in detail so asnot to obscure the description of various embodiments. Additionally,although the various embodiments focus on implementation within a memorydevice, the techniques and methods presented herein are readilyapplicable to a number of other three-dimensional (3D) electronicdevices.

Generally, a 3D electronic device may be considered to be a deviceformed by a process that combines multiple levels of electronic devices(e.g., one device formed over another) using planar formations (e.g.,multiple devices on a single level). Since multiple levels in 3D devicesmay use approximately the same area on a substrate, an overall densityof devices (e.g., memory devices) can be increased in relation to thenumber of levels. However, simple combinations of, for example, 3Dmemory cells with peripheral transistors (e.g., formed as CMOS devices)may result in performance degradation due to higher resistance andparasitic values (e.g., higher capacitance) due to the increased heightsof contact formations. The increased height of contacts may also lowerdevice yield due to higher failure rates in contact formation. Forexample, transistors used in multi-level peripheral (e.g., support)circuits tend to have degraded performance characteristics when comparedwith similar transistors formed by existing planar technologies.

The disclosed subject matter proposes, among other things, variousmemory device structures that reduce the difference in height from thesubstrate between 3D memory arrays and peripheral circuits. Moreover,the disclosed subject matter is scalable with an increasing number oflevels in 3D stacks. For example, the contacts and interconnections havesubstantially constant parasitic resistance and capacitance valuesregardless of the number of levels. Accordingly, transistor and wireperformance may remain relatively constant regardless of the number oflevels.

The disclosed methods and apparatuses can advantageously be used to, forexample, increase cell density while maintaining a relatively smallfootprint. Further, the methods and apparatuses can be extended to NORdevices, microcontroller devices, other memory types, general purposelogic, and a host of other apparatuses. Various 3D devices includingrepeating devices (e.g., SRAM), transistors, standard CMOS logic, and soon may all benefit from application of the 3D fabrication processesdisclosed herein.

Referring now to FIG. 1, a block diagram of an apparatus in the form ofa memory device 101 is shown. The memory device 101 includes one or morememory arrays 102 having a number (e.g., one or more) of memory cells100 according to an embodiment. The memory cells 100 can be arranged inrows and columns along with access lines 104 (e.g., wordlines to conductsignals WL0 through WLm) and first data lines 106 (e.g., bit lines toconduct signals WL0 through BLn). The memory device 101 can use theaccess lines 104 and the first data lines 106 to transfer information toand from the memory cells 100. A row decoder 107 and a column decoder108 decode address signals A0 through AX on address lines 109 todetermine which ones of the memory cells 100 are to be accessed.

Sense circuitry, such as a sense amplifier circuit 110, operates todetermine the values of information read from the memory cells 100 inthe form of signals on the first data lines 106. The sense amplifiercircuit 110 can also use the signals on the first data lines 106 todetermine the values of information to be written to the memory cells100.

The memory device 101 is further shown to include circuitry 112 totransfer values of information between the memory array 102 andinput/output (I/O) lines 105. Signals DQ0 through DQN on the I/O lines105 can represent values of information read from or to be written intothe memory cells 100. The I/O lines 105 can include nodes of the memorydevice 101 (e.g., pins, solder balls, or other interconnect technologiessuch as controlled collapse chip connection (C4), or flip chip attach(FCA)) on a package where the memory device 101 resides. Other devicesexternal to the memory device 101 (e.g., a memory controller or aprocessor, not shown in FIG. 1) can communicate with the memory device101 through the I/O lines 105, the address lines 109, or the controllines 120.

The memory device 101 can perform memory operations, such as a readoperation, to read values of information from selected ones of thememory cells 100 and a programming operation (also referred to as awrite operation) to program (e.g., to write) information into selectedones of the memory cells 100. The memory device 101 can also perform amemory erase operation to clear information from some or all of thememory cells 100.

A memory control unit 118 controls memory operations using signals onthe control lines 120. Examples of the signals on the control lines 120can include one or more clock signals and other signals to indicatewhich operation (e.g., a programming operation or read operation) thememory device 101 can or should perform. Other devices external to thememory device 101 (e.g., a processor or a memory controller) can controlthe values of the control signals on the control lines 120. Specificcombinations of values of the signals on the control lines 120 canproduce a command (e.g., a programming, read, or erase command) that cancause the memory device 101 to perform a corresponding memory operation(e.g., a program, read, or erase operation).

Although various embodiments discussed herein use examples relating to asingle-bit memory storage concept for ease in understanding, theinventive subject matter can be applied to numerous multiple-bit schemesas well. For example, each of the memory cells 100 can be programmed toa different one of at least two data states to represent, for example, avalue of a fractional bit, the value of a single bit or the value ofmultiple hits such as two, three, four, or a higher number of bits.

For example, each of the memory cells 100 can be programmed to one oftwo data states to represent a binary value of “0” or “1” in a singlebit. Such a cell is sometimes called a single-level cell (SLC).

In another example, each of the memory cells 100 can be programmed toone of more than two data states to represent a value of, for example,multiple bits, such as one of four possible values “00,” “01,” “10,” and“11” for two bits, one of eight possible values “000,” “001,” “010,”“011,” “100,” “101,” “110,” and “111” for three bits, or one of anotherset of values for larger numbers of multiple bits. A cell that can beprogrammed to one of more than two data states is sometimes referred toas a multi-level cell (MLC). Various operations on these types of cellsare discussed in more detail, below.

The memory device 101 can receive a supply voltage, including supplyvoltage signals V_(cc) and V_(ss), on a first supply line 130 and asecond supply line 132, respectively. Supply voltage signal V_(ss) can,for example, be at a ground potential (e.g., having a value ofapproximately zero volts). Supply voltage signal V_(cc) can include anexternal voltage supplied to the memory device 101 from an externalpower source such as a battery or alternating-current to direct-current(AC-DC) converter circuitry (not shown in FIG. 1).

The circuitry 112 of the memory device 101 is further shown to include aselect circuit 115 and an input/output (I/O) circuit 116. The selectcircuit 115 can respond to signals SEL1 through SELn to select signalson the first data lines 106 and the second data lines 113 that canrepresent the values of information to be read from or to be programmedinto the memory cells 100. The column decoder 108 can selectivelyactivate the SEL1 through SELn signals based on the A0 through AXaddress signals present on the address lines 109. The select circuit 115can select the signals on the first data lines 106 and the second datalines 113 to provide communication between the memory array 102 and theI/O circuit 116 during read and programming operations.

The memory device 101 may comprise a non-volatile memory device, and thememory cells 100 can include non-volatile memory cells, such that thememory cells 100 can retain information stored therein when power (e.g.,V_(cc), or V_(ss), or both) is disconnected from the memory device 101.

Each of the memory cells 100 can include a memory element havingmaterial, at least a portion of which can be programmed to a desireddata state (e.g., by being programmed to a corresponding resistance orcharge storage state). Different data states can thus representdifferent values of information programmed into each of the memory cells100.

The memory device 101 can perform a programming operation when itreceives (e.g., from an external processor or a memory controller) aprogramming command and a value of information to be programmed into oneor more selected ones of the memory cells 100. Based on the value of theinformation, the memory device 101 can program the selected memory cellsto appropriate data states to represent the values of the information tobe stored therein.

One of ordinary skill in the art may recognize that the memory device101 may include other components, at least some of which are discussedherein. However, several of these components are not shown in thefigure, so as not to obscure details of the various embodimentsdescribed. The memory device 101 may include devices and memory cells,and operate using memory operations (e.g., programming and eraseoperations) similar to or identical to those described below withreference to various other figures and embodiments discussed herein.

With reference now to FIG. 2, a partial block diagram of an apparatus inthe form of a memory device 201 is shown to include a memory array 202,including memory cells 200 with access components 211 and memoryelements 222, according to an example embodiment. The memory array 202may be similar to or identical to the memory array 102 of FIG. 1. Asfurther shown in FIG. 2, the memory cells 200 are shown to be arrangedin a number of rows 230, 231, 232, along with access lines, for exampleword lines, to conduct signals to the cells 200, such as signals WL0,WL1, and WL2. The memory cells are also shown to be arranged in a numberof columns 240, 241, 242 along with data lines, for example bit lines,to conduct signals to the cells 200, such as signals BL0, BL1, and BL2.The access components 211 can turn on (e.g., by using appropriate valuesof signals WL0, WL1, and WL2) to allow access to the memory elements222, such as to operate the memory elements 222 as pass elements, or toread information from or program (e.g., write) information into thememory elements 222.

Programming information into the memory elements 222 can include causingthe memory elements 222 to have specific resistance states. Thus,reading information from a memory cell 200 can include, for example,determining a resistance state of the memory element 222 in response toa specific voltage being applied to its access component 211. The act ofdetermining resistance may involve sensing a current (or the absence ofcurrent) flowing through the memory cell 200 (e.g., by sensing a currentof a data line electrically coupled to the memory cell). Based on ameasured value of the current (including, in some examples, whether acurrent is detected at all), a corresponding value of the informationstored in the memory can be determined. The value of information storedin a memory cell 200 can be determined in still other ways, such as bysensing a voltage of a data line electrically coupled to the memorycell.

Various ones or all of the memory cells 100, 200 of FIG. 1 and FIG. 2can include a memory cell having a structure similar or identical to oneor more of the memory cells described below.

With reference now to FIG. 3, a block diagram plan view of a memorydevice 301 is shown. The memory device 301 is shown to include aperipheral circuits region 303 and a memory array region 305. Theperipheral circuits region 303 may include support circuits for thememory array region 305 including row decoders, column decoders, senseamplifiers, select circuits, bias circuits, and so on. Each of thesesupport circuits may be similar to or identical to the circuitsdescribed above with reference to FIG. 1. The memory array region 305may comprise various types of volatile or non-volatile memory cellsincluding flash memory, conductive-bridging random access memory(CBRAM), resistive RAM (RRAM), phase change memory (PCM), static RAM(SRAM), dynamic RAM (DRAM), or various other types and combinations oftypes of memory devices.

In a specific embodiment, the peripheral circuits region 303 may have afirst dimension, D₁, of approximately 10 mm and a second dimension, D₂,of approximately 5 mm. The memory array region 305 may have a firstdimension, D₃, of approximately 10 mm and a second dimension, D₄, ofapproximately 10 mm. The peripheral circuits region is located adjacentto a peripheral (e.g., outside) edge of a substrate of the memory device301 and adjacent (e.g., laterally adjacent) to the memory array region305. The peripheral circuits region 303 and the memory array region 305are separated by a distance, D₅, of approximately 1 micrometer (micron).Dimensions larger or smaller than those described may be employed. Thus,the specific dimensions given herein are provided merely to assist theperson of ordinary skill in the art in more fully understanding thesubject matter.

FIG. 4A through 4D show elevational views during various operationsperformed in the formation of a memory device 400. Referringspecifically to FIG. 4A, an elevational view of the memory device 400 isshown to include a substrate 401 with a memory array 420 (e.g., a memorystructure) formed proximate to (e.g., on) a surface 411 of the substrate401. The memory array 420 comprises a stack 422 formed of alternatinglevels of semiconductor materials 405 and dielectric materials 403surrounding a pillar 407. The pillar 407 may electrically couple thelevels of semiconductor materials 405 together.

As shown in FIG. 4A, each of the levels of the semiconductor material405 is separated from a respective adjacent one of the levels of thesemiconductor material 405 by at least a respective one of the levels ofthe dielectric material 403. Although only four levels of each of thelevels of semiconductor material 405 and each of the levels of thedielectric material 403 are shown, a skilled artisan will recognize thatany number of levels may be formed on the surface 411 of the substrate401.

The substrate 401 may comprise, for example, any of various substratesemiconducting types used in the semiconductor and allied industries.Substrate types may therefore include silicon wafers, compoundsemiconductor wafers, thin film head assemblies,polyethylene-terephthalate (PET) films deposited or otherwise formedwith a semiconductor layer (followed by an annealing activity, such asexcimer laser annealing (ELA) in some embodiments), or numerous othertypes of substrates known independently in the art. In addition tosilicon, various other elemental semiconductor materials may also beconsidered. Further, the substrate 401 may comprise a region of asemiconductor material formed over a non-semiconductor material (e.g.,quartz, ceramic, etc.). For ease of understanding the fabricationactivities that follow, the substrate 401 may be considered to be asilicon wafer. Upon reading and understanding the disclosure providedherein, a person of ordinary skill in the art will understand how tomodify the fabrication activities and operations disclosed to accountfor other types of materials and electronic devices.

The dielectric materials 403 may comprise one or more dielectricmaterials known in the art. For example, the various dielectricmaterials may comprise silicon dioxide (SiO₂), silicon nitride(Si_(x)N_(y)), aluminum oxide (Al₂O₃), tantalum pentoxide (Ta₂O₅),hafnium oxide (HfO₂), or a variety of other organic or inorganicdielectric materials, each of which may be used as an alternative to orin conjunction with others of the materials described. Also, variousother combinations of materials may also be substituted or included.

The semiconductor material 405 may comprise any of a number of types ofsingle-crystal or amorphous semiconductor materials. For example, thesemiconductor material 405 may be an epitaxial deposition of silicon,other elemental semiconductor, or compound semiconductor. In otherexamples, the semiconductor material 405 may be a polysilicon material(e.g., a conductively doped polysilicon material) formed by, forexample, thermal decomposition or pyrolysis of silane such as alow-pressure chemical vapor deposition (LPCVD) process. Other techniquesknown independently in the art, such as DC sputtering, followed by apost-anneal activity in some embodiments, may also be utilized.

In a specific example, each of the levels of semiconductor material 405and each of the levels of the dielectric material 403 are shown ashaving a dimension, D₇ and D₆ respectively, as approximately 50 nm each.However, dimensions larger or smaller than these may be employed.

The pillar 407 may comprise a (e.g., conductively doped) semiconductormaterial. The semiconductor material may comprise any one or more of theelemental or compound semiconductor materials discussed above. In anexample, the pillar 407 comprises channel material (e.g., any one ormore of the semiconductor materials disclosed herein). Therefore, invarious embodiments, a string of memory cells (e.g., a NAND string ofmemory cells) may be formed along the semiconductor material 405 levels.

In a specific example, a dimension, D₈, of the pillar 407 isapproximately 50 nm. An overall height, indicated by dimension D₉, willdepend at least partially on the number and thicknesses of alternatinglevels of the semiconductor materials 405 and the dielectric materials403. Also, as shown in FIG. 4A, an upper surface 413 of the pillar 407extends above an upper surface 409 of the uppermost level of the levelsof the semiconductor material 405. The upper surfaces 409, 413 maytherefore be considered distal to the surface 411 of the substrate 401.The difference in height between the tipper surface 413 of the pillar407 and the upper surface 409 of the semiconductor material 405 mayvary. In some embodiments, the upper surface 413 of the pillar 407 maybe substantially coplanar with or below the upper surface 409 of thesemiconductor material 405. A person of ordinary skill in the art willrecognize that terms such as “tipper” and “above” are being used asrelative terminology with respect to a chosen plane, and are not beingused in a specific fashion with respect to a fixed plane.

With reference now to FIG. 4B, an elevated portion 421 (e.g., aperipheral structure) is formed on the surface 411 of the substrate 401laterally adjacent to (e.g., near) a peripheral edge of the memory array420. In various embodiments, the elevated portion 421 is formed suchthat an uppermost surface 423 of the elevated portion 421 issubstantially coplanar with (e.g., above, below, or similar in heightto) the upper surface 409 of the stack 422 of semiconductor materials405. In various embodiments, the elevated portion 421 is formed suchthat an uppermost surface 423 of the elevated portion 421 issubstantially coplanar with (e.g., above, below, or similar in heightto) the upper surface 413 of the pillar 407. As used herein,“substantially co-planar” may include, for example, within +/−50% of anoverall height of the pillar 407, indicated by dimension D₉. In otherexamples, “substantially co-planar” may include, for example, within+/−10% or less of an overall height of the pillar 407, indicated bydimension D₉.

In various embodiments, the elevated portion 421 may comprise epitaxialsilicon formed on the surface 411 of the substrate 401. In variousembodiments, the elevated portion 421 may be a semiconductor material(e.g., single crystal or amorphous silicon, germanium, other elementalsemiconductor material, compound semiconductor material, etc.) formed(e.g., through various deposition techniques) on the surface 411 of thesubstrate 401. In various embodiments, the elevated portion 421 may be adielectric material formed on the surface 411 of the substrate 401 andhaving exposed portions covered with one or more of the varioussemiconductor materials described herein to electrically couple theelevated portion 421 to the substrate 401.

FIG. 4C shows one or more devices 430 formed adjacent to (e.g., onand/or in) the uppermost surface 423 of the elevated portion 421. Theone or more devices 430 may operably interface with (e.g., beelectrically or optically coupled to) the memory array 420.

In various embodiments, the devices 430 may comprise active components(e.g., transistors, registers, etc.). For example, a first structure431A and a third stricture 431C may be wells of a transistor. A secondstructure 431B may be a transistor gate. In various embodiments, thefirst structure 431A, the second structure 431B, and the third stricture431C may comprise passive components. For example, the first structure431A and the third structure 431C may be inductors formed into theelevated portion 421. The second structure 431B may be a portion of acapacitor formed above the elevated portion 421. In various embodiments,the first structure 431A, the second structure 431B, and the thirdstructure 431C may comprise a mix of active and passive components.

As will be explained in more detail with reference to FIG. 4D, below,the elevated portion 421 allows a reduction in the height of contacts(e.g., ohmic or optical contacts) formed between the devices 430 and aninterconnect (e.g., a metal line or an optical waveguide) that is formedlater in the fabrication process.

FIG. 4D shows a number of memory array contacts 453 and a number ofdevice contacts 451. In some embodiments, the contacts 451, 453 may beformed substantially concurrently. In some embodiments, either thememory array contacts 453 or the device contacts may be formed first.Interconnects 455 may be used to interconnect various portions of thedevices 430, the memory array 420, and other devices external to thememory device 400. As will be apparent to a person of ordinary skill inthe art, only a portion of the contacts are shown to preserve clarity ofthe drawings.

With the devices 430 being formed on and/or in the elevated portion 421,it can be seen that the overall height of the device contacts 451 isreduced when compared with forming the devices 430 on the surface 411 ofthe substrate 401. That is, a conventional process in which the devicesare formed on the surface of the substrate would require the devicecontacts to be a greater height in order to reach the same level (e.g.,to couple to the interconnects) as the memory array contacts. Thegreater height increases the resistance of the contacts, and may have adetrimental effect on other electrical factors (e.g., increasedparasitic capacitance and inductance) of the device contacts, forexample.

Further, since the device contacts 451 have a reduced height comparedwith other contact formation processes, vias prepared to form thecontacts also have a reduced height. Consequently, the tolerance withwhich the vias are placed may be relaxed due the reduced height. With ashorter overall height of the vias, and the subsequently formed devicecontacts 451, the precision and accuracy of placement of each of thevias may be less critical. Taller (e.g., higher) ones of the memoryarray contacts 453 can be located on edges of levels of thesemiconductor materials 405 that are closer to the surface 411 of thesubstrate 401. However, since a greater area is available in which thememory array contacts 453 may be coupled to the semiconductor materials405, a relaxed design rule (e.g., a greater tolerance for placement ofthe vias and the subsequently formed contacts) is possible. Thus, usingvarious embodiments described herein, a person of ordinary skill in theart will recognize that desirable electrical properties of the devicecontacts 451 may be increased (e.g., unproved conductivity due toreduced resistance) at the same time the tolerance of contact placementduring device formation may be relaxed.

Moreover, the various embodiments described allow for enhancedscalability of three-dimensional memory devices. For example, as anincreasing number of levels are added to a memory device, the devicecontacts 451 may have a consistent parasitic resistance, capacitance,and inductance since the elevated portion 421 can be scaled to match theheight of the memory array 420 (FIG. 4A). As more levels are added tothe memory array 420, the height of the elevated portion 421 can beincreased. Thus, the device contacts 451 remain fairly consistent inheight regardless of the number of levels in the memory array 420.

Referring now to FIG. 5A through FIG. 5C, elevational views duringvarious operations performed in the formation of a memory device 500 areshown. Specifically with reference now to FIG. 5A, a cavity 504, havinga lower surface 521, is formed in a substrate 501. The substrate 501 maybe similar to the substrate 401 described above with reference to FIG.4A through FIG. 4D, above. For example, the substrate 501 may, forexample, comprise elemental or compound semiconductors, dielectricmaterials covered with a semiconductor material, or a number ofcombinations of materials described herein.

In one embodiment, the cavity 504 is a trench. In other embodiments, theopening can be comprised of geometries other than a trench. However, forease in understanding fabrication of the inventive subject matterdiscussed herein, the cavity 504 can be considered to be an opening(e.g., an aperture) formed within the substrate 501.

The cavity 504 may be formed with dimensions suitable for a later-formedmemory array. For example, in a specific embodiment, the cavity 504 hasa first dimension, D₁₁, of approximately 10 mm as measured along asurface 502 of the substrate 501. However, this dimension may varydepending upon dimensions D₃ and D₄ of the memory array region 305 ofFIG. 3.

The second dimension, D₁₀, is dependent, at least partially, on thethicknesses and number of levels of the later-formed memory array thatare to be formed substantially within (e.g., in some embodiments,entirely within) the cavity 504. For example, assuming 16 alternatinglevels of the semiconductor materials 405 and the dielectric materials403, with each layer having dimensions D₇ and D₆ of 50 nm each asdescribed with reference to FIG. 4A, the second dimension D₁₀ isapproximately 1.6 microns. The second dimension, D₁₀, of the cavity 504may be selected so that an upper surface of a later-formed memory arrayis substantially coplanar with (e.g., above, below, or similar in heightto) the surface 502 of the substrate 501. In various embodiments, thecavity 504 may be formed in the substrate 501 to a depth (e.g., thesecond dimension, D₁₀) that is substantially equivalent to the height ofa 3D memory array comprising multiple levels of memory cells asdescribed above, and formed substantially within the cavity 504.However, the cavity 504 may be formed to any dimensions and shapes asdiscussed, by way of example, below.

For example, in a specific embodiment, the cavity 504 may be formed byan anisotropic dry etch process (e.g., reactive-ion etch (RIE), plasmaetch, etc.). In other embodiments, the cavity 504 may be formed byvarious types of chemical anisotropic etchants (e.g., such as potassiumhydroxide (KOH), tetramethyl ammonium hydroxide (TMAH), etc.),mechanical etching techniques, other types of ion milling, laserablation techniques, etc. In the case of a chemical etchant, variouslattice planes as found in, for example, single crystal materials, canassist in vertical sidewall formation. However, in other embodiments,vertical sidewall formation is not necessary and a sidewall slope to thecavity 504 may be present in certain applications. Therefore, althoughprimarily anisotropic etchants and milling techniques have beendiscussed, isotropic etchants may also be employed. For example, ahydrofluoric/nitric/acetic (HNA) acid chemical etchant may be used.Related industries such as micro-electrical mechanical systems (MEMS)may independently supply techniques for still further means to form thecavity 504.

In FIG. 5B, a memory array 520 is formed on a lower surface 521 and atleast partially within the cavity 504 of the substrate 501. In someembodiments, the memory array 520 may be formed completely within thecavity 504. In some embodiments, the memory array 520 may be formedprimarily, but not entirely, within (e.g., substantially within) thecavity 504. The memory array 520 may be similar to or identical to thememory array 420 (FIG. 4A) and comprises alternating levels ofsemiconductor materials 505 and dielectric materials 503 with a pillar507. As shown in FIG. 59, each of the levels of the semiconductormaterial 505 is separated from a respective adjacent one of the levelsof the semiconductor material 505 by at least a respective one of thelevels of the dielectric material 503. Although only four levels of eachof the levels of the semiconductor material 505 and each of the levelsof the dielectric material 503 are shown, a skilled artisan willrecognize that any number of levels may be formed in the memory array520. Each of the levels of the semiconductor material 505 and of thedielectric material 503 may be formed from materials similar to thesemiconductor material 405 and the dielectric material 503 describedabove with reference to FIG. 4A.

With continuing reference to FIG. 5B, one or more devices 530 are formedon and/or in the surface 502 of the substrate 501. The one or moredevices 530 may operably interface with the memory array 520. In anexample, a channel of the one or more devices may have a distance,H_(1C), below the surface 502 of greater than 100 nm. In an example, abottom portion (e.g., on the lower surface 521) of the memory array 520may have a distance, H_(1A), below the surface 502 of greater than 1 μm.In an example, a top portion of the pillar 507 may be at a distance H₂,above the surface 502 of less than 100 nm. In an example, a top portionof the pillar 507 may be at a distance H₂, above the surface 502 of lessthan 1 μm. Each of these measurements is provided simply as examples.Other distances, greater or smaller than these, may be used as well.

In various embodiments, and as discussed above with reference to FIG.4C, the one or more devices 530 may comprise active components (e.g.,transistors, registers, etc.). For example, a first structure 531A and athird structure 531C may be wells of a transistor. A second structure531B may be a transistor gate. In various embodiments, the firststructure 531A, the second structure 531B, and the third structure 531Cmay be passive components. For example, the first structure 531A and thethird structure 531C may be inductors formed into or on the surface 502of the substrate 501. The second structure 531B may be a portion of acapacitor formed above the substrate 501. In various embodiments, thefirst structure 531A, the second structure 531B, and the third structure531C may comprise a mix of active and passive components.

As described above with reference to FIG. 4D, above, the cavity 504formed into the substrate 501 allows a reduction in the height ofcontacts formed between the one or more devices 530 and an interconnectthat is formed later in the fabrication process.

FIG. 5C shows a number of memory array contacts 553 and a number ofdevice contacts 551. In various embodiments, the contacts 551, 553 maybe formed substantially concurrently. In some embodiments, either thememory array contacts 553 or the device contacts may be formed first.Interconnects 555 may be used to interconnect various portions of theone or more device 530, the memory array 520, and other devices externalto the memory device 500. As will be apparent to a person of ordinaryskill in the art, only a portion of the contacts are shown to preserveclarity of the drawings.

Since the one or more devices 530 are formed on and/or in the surface502 of the substrate 501, with the memory arrays 520 formed at leastpartially in the cavity 504 (and therefore most or all of the levels aresubstantially below the surface 502 of the substrate 501), the overallheight of the device contacts 551 is reduced when compared with formingthe memory array 520 on the surface 502 of the substrate 501. Thus,similar to the description of the device contacts 451 given withreference to FIG. 4D, above, the reduced height may reduce theresistance of the device contacts 551 as well as potentially reducingany detrimental effects on other electrical factors (e.g., parasiticcapacitance and inductance) of the device contacts as well.

FIG. 6 is a block diagram of a system 600 with a memory device that mayinclude one or more of the various embodiments described herein. Thesystem 600 is shown to include a controller 603, an input/output (I/O)device 611 (e.g., a keypad, a touchscreen, or a display), a memorydevice 609, a wireless interface 607, a static random access memory(SRAM) device 601, and a shift register 615, each coupled to each othervia a bus 613. A battery 605 may supply power to the system 600 in oneembodiment. The memory device 609 may include a NAND memory, a flashmemory, a NOR memory, a combination of these, or the like. The memorydevice 609 may include one or more of the novel devices and structuresdescribed herein.

The controller 603 may include, for example, one or moremicroprocessors, digital signal processors, micro-controllers, or thelike. The memory device 609 may be used to store information transmittedto or by the system 600. The memory device 609 may optionally also beused to store information in the form of instructions that are executedby the controller 603 during operation of the system 600 and may be usedto store information in the form of user data either generated,collected, or received by the system 600 (such as image data). Theinstructions may be stored as digital information and the user data, asdisclosed herein, may be stored in one section of the memory as digitalinformation and in another section as analog information. As anotherexample, a given section at one time may be labeled to store digitalinformation and then later may be reallocated and reconfigured to storeanalog information. The controller 603 may include one or more of thenovel devices and structures described herein.

The I/O device 611 may be used to generate information. The system 600may use the wireless interface 607 to transmit and receive informationto and from a wireless communication network with a radio frequency (RF)signal. Examples of the wireless interface 607 may include an antenna,or a wireless transceiver, such as a dipole antenna. However, the scopeof the inventive subject matter is not limited in this respect. Also,the I/O device 611 may deliver a signal reflecting what is stored aseither a digital output (if digital information was stored), or as ananalog output (if analog information was stored). While an example in awireless application is provided above, embodiments of the inventivesubject matter disclosed herein may also be used in non-wirelessapplications as well. The I/O device 611 may include one or more of thenovel devices and structures described herein.

The various illustrations of the procedures and apparatuses are intendedto provide a general understanding of the structure of variousembodiments and are not intended to provide a complete description ofall the elements and features of the apparatuses and methods that mightmake use of the structures, features, and materials described herein.Based upon a reading and understanding of the disclosed subject matterprovided herein, a person of ordinary skill in the art can readilyenvision other combinations and permutations of the various embodiments.The additional combinations and permutations are all within a scope ofthe present invention.

The Abstract of the Disclosure is provided to comply with 37 C.F.R. §1.72(b), requiring an abstract allowing the reader to quickly ascertainthe nature of the technical disclosure. The abstract is submitted withthe understanding that it will not be used to interpret or limit theclaims. In addition, in the foregoing Detailed Description, it may beseen that various features are grouped together in a single embodimentfor the purpose of streamlining the disclosure. This method ofdisclosure is not to be interpreted as limiting the claims. Thus, thefollowing claims are hereby incorporated into the Detailed Description,with each claim standing on its own as a separate embodiment.

What is claimed is:
 1. A method of manufacturing a semiconductorapparatus, the method comprising: forming a memory structure includingconductor material levels and dielectric material levels alternatelystacked on a surface of a substrate in a memory array region, each ofthe conductor material levels being separated from an adjacent one ofthe conductor material levels by one of the dielectric material levels;epitaxially forming a peripheral structure over a peripheral portion ofthe substrate for peripheral circuits adjacent to the memory structure,the peripheral structure including silicon, the peripheral structureforming a continuous interface with the substrate, the peripheralstructure having an upper surface elevated above the substrate surface,the peripheral structure including circuit components formed at least inpart within the peripheral structure, wherein a bottom of the circuitcomponents are spaced above a top surface of the substrate; and formingcontacts and interconnects coupling one or more circuit components ofthe peripheral circuits to the memory structure.
 2. The method of claim1, wherein the interconnects extend between respective contactsextending to the peripheral circuits and respective contacts extendingto the memory structure.
 3. The method of claim 2, wherein at least somethe contacts extending to the peripheral circuits are shorter than thecontacts extending to the memory structure.
 4. The method of claim 1,further comprising forming the peripheral structure after forming themultiple conductor and dielectric levels of the memory structure.
 5. Themethod of claim 1, further comprising depositing one or more conductivematerials to form the elevated peripheral structure.
 6. The method ofclaim 1, wherein the upper surface of the peripheral structure issubstantially coplanar with an upper surface of the memory structure. 7.The method of claim 1, wherein the upper surface of the peripheralstructure is within +50 percent of an overall height of the memorystructure.
 8. The method of claim 1, wherein the upper surface of theperipheral structure is within +10 percent of an overall height of thememory structure.
 9. The method of claim 1, wherein forming the elevatedperipheral structure comprises: forming a dielectric material; andforming a semiconductor material over exposed portions of the dielectricmaterial.
 10. The method of claim 1, further comprising: formingcontacts from the memory structure and contacts from the peripheralstructure; and forming interconnects between the contacts from thememory structure and the contacts from the peripheral structure.
 11. Themethod of claim 1, further comprising forming interconnects from edgesof one or more of the alternately stacked conductor material levels todevices formed on the peripheral structure.
 12. The method of claim 1,further comprising electrically coupling the peripheral structure to thesubstrate.
 13. A method, comprising: forming a memory array includingmultiple levels of memory cells, the memory array including alternatelystacking conductor material levels and dielectric material levels, eachof the conductor material levels being separated from an adjacent one ofthe conductor material levels by one of the dielectric material levels,the levels being stepped such that an uppermost surface of at least oneend of a lower level of each of the conductor material levels extendsbeyond an overlying one of the conductor material levels and thedielectric material levels; epitaxially forming an elevated portionadjacent to the memory array, the elevated portion formed over aperipheral portion of the surface of a substrate, the elevated portionforming a continuous interface with the substrate, the elevated portioncomprising one or more regions of semiconductor material; and formingperipheral circuitry for the memory array, including forming devices forinterfacing with the memory structure on or in a surface of the elevatedportion, wherein a bottom of the devices for interfacing with the memorystructure are spaced above a top surface of the substrate.
 14. Themethod of claim 13, further comprising: forming contacts from theuppermost surface of the memory structure that are extended beyondoverlying levels; forming contacts from one or more of the devicesformed on or in the peripheral structure; and forming interconnectsbetween the contacts from the memory structure and the contacts from theperipheral structure.
 15. The method of claim 13, further comprisingforming interconnects from edges of one or more of the alternatelystacked material levels, which are more proximate the substrate, todevices formed on the peripheral structure.
 16. The method of claim 13,wherein the elevated portion includes a dielectric layer between thesurface of the substrate and the elevated portion.